Obtaining Niobium Nitride on n-GaN by Surface Mediated Nitridation Technique

In this work the n-GaN(1000) surface is used as a source of nitrogen atoms in order to obtain niobium nitride film by surface-mediated nitridation technique. To end, physical vapor deposition on GaN followed sample annealing at 1123 K. A thermally induced decomposition and interfacial mixing phenomena lead formation compound, which contains Nb from thin N substrate. The processes allowed obtaining ordered NbNx films GaN. Structural chemical properties both substrate were studied in-situ surface-sensitive techniques, i.e., X-ray UV photoelectron spectroscopies (XPS/UPS) low-energy electron diffraction (LEED). Then, NbNx/GaN morphology was investigated ex-situ scanning tunneling microscopy (STM).